Finite Element Simulation of Metal–Semiconductor–Metal Photodetector

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LLE Review, Volume 119 154 Introduction Low-temperature–grown GaAs (LT-GaAs), deposited by molecular beam epitaxy, has been known for its ultrashort, subpicosecond photocarrier lifetime and relatively high carrier mobility. Therefore, in recent years LT-GaAs has been the material of choice for the fabrication of photonic devices such as photoconductive switches,1,2 both of the metal–semiconductor–metal (MSM)3 and freestanding types,4 for the generation of subpicosecond electrical pulses for ultrafast device characterization,5 THz time-domain spectroscopy,6 antennas for the generation and detection of THz radiation,7 as well as for optical photomixers.8,9

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تاریخ انتشار 2009